HT Semiconductor 2sd1005 free download

File name 2sd1005.pdf

2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package High Breakdown Voltage 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA,IE=0 100 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V Collector cut-off current ICBO VCB=100V,IE=0 0.1